Abstract
Extensive spectroscopic investigations of the emission from a CF 4/8% O 2 RF discharge in the presence of a silicon substrate strongly suggest that there is a propensity for electron spin angular momentum to be conserved in gas-surface interactions. The examples chosen are of doublet and quartet F atoms and singlet, triplet and quintet F + ions interacting with the surface of a Si(100) wafer. Experiments were carried out in a parallel plate plasma etcher and the results are of relevance to an understanding of basic mechanisms in plasma etching in VLSI fabrication and of discharge-surface interactions in general.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
