Abstract
Extensive spectroscopic investigations of the emission from a CF 4/8% O 2 RF discharge in the presence of a silicon substrate strongly suggest that there is a propensity for electron spin angular momentum to be conserved in gas-surface interactions. The examples chosen are of doublet and quartet F atoms and singlet, triplet and quintet F + ions interacting with the surface of a Si(100) wafer. Experiments were carried out in a parallel plate plasma etcher and the results are of relevance to an understanding of basic mechanisms in plasma etching in VLSI fabrication and of discharge-surface interactions in general.
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