Irreversibility field up to 42 T ofGdBa2Cu3O7-δ thin films grown by PLD and its dependence on deposition parameters

Abstract

We investigated the irreversibility field ofGdBa2Cu3O7 − δ thin films grown epitaxially by pulsed laser deposition on single crystallineLaAlO3(100) substratesin pulsed magnetic fields up to 42 T and at temperatures between 50 and 100 K. The critical temperatureTc reached valuesof 93.5 K with a ΔTc of 0.6 K and an inductively measured self-field critical current densityJc at 77 Kof 3.7 MA cm − 2. The pulsed magnetic field measurements yield a strong dependence ofHirr on the deposition rate, but the film thickness has a small influence on theresistive transition in high magnetic fields. A maximum irreversibility fieldHirr of 40.1 T was measured at a temperature of 50 K for a 300 nm thick film.