Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

Hojeong Ryu,Sungjun Kim

doi:10.3390/met11040653

Abstract

In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

Highlights

Since significant memory characteristics were first reported in metal oxides such as NiO and TiO2 in 2005, resistive random-access memory (RRAM) memory has been extensively studied [1,2,3,4]
unipolar resistive switching (URS) has a disadvantage in that the reset current is too high for joule heating, or that the variation in switching parameters, such as the set and reset voltage, and high-resistance state (HRS) and low-resistance state (LRS) in the cycle-to-cycle and cell-to-cell, is large [1]
It should be noted that HfO2, Al2O3, and Ta2O5 achieved much more stable resistive switching behaviors [23,24,25,26] and higher endurances than the URS did

Summary

Introduction

Since significant memory characteristics were first reported in metal oxides such as NiO and TiO2 in 2005, resistive random-access memory (RRAM) memory has been extensively studied [1,2,3,4]. URS has a disadvantage in that the reset current is too high for joule heating, or that the variation in switching parameters, such as the set and reset voltage, and high-resistance state (HRS) and low-resistance state (LRS) in the cycle-to-cycle and cell-to-cell, is large [1].

Results

Conclusion