Abstract
The irradiation-temperature dependence of light-induced degradation has been studied at temperatures between 300 K and 25 K. Although Si-H2 bonds have a strong influence on degradation at an irradiation temperature of 300 K, their influence is reduced at low irradiation temperatures. Si-H2 bonds are thought to have a stabilization effect on newly created defects. Also, the hydrogen atom itself was found to have an influence on light-induced degradation in a-Si solar cells with low Si-H2 bond density or in the region of low irradiation temperatures below about 60 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
