Irradiation of copper with 25 MeV oxygen ions-defect production and annealing

Abstract

Abstract Results of damage rate measurements and an isochronal annealing program from 15K up to room temperature after heavy ion irradiation of copper are reported. Irradiations were performed at temperatures of the recovery stages I (20 K) and I1 (76K, 90 K). The fluences of the low temperature irradiation are the largest reported in literature, resulting in defect concentrations up to 3.5·10−3 or to a radiation induced resistivity increase of 0.70 μΩcm. The damage rates can be explained by the generally accepted models of radiation damage derived for electron irradiation. In stage I1 extended trapping models have been used. The differential recovery spectra reveal all substages of stage I reported after electron irradiations. Substage IE shows to be strongly dose dependent, as well as stage III. The defect retentionf, at the end of stage I is between the values for electron and fast neutron irradiations, and clearly higher than after irradiation with α-particles.