Abstract

Magnetism of 6H-SiC single crystals implanted with 3 MeV protons is studied both experimentally and theoretically. We found that proton irradiation can induce stable ferromagnetism in 6H-SiC with a Curie temperature above 300 K. There is a dose window available for tuning the magnetization of the samples. The maximum saturation magnetizations (0.17 emu/g) are three orders of magnitude larger than that reported in neutron-irradiated SiC crystals (1 × 10−4 emu/g). First-principles calculations indicate that the ferromagnetism is related to the divacancy-related defects (VSiVC + nH, (n = 1–3)) generated under proton irradiation. This offers a promising route for the development of metal-free SiC magnets.

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