Abstract
Failure of UV detectors made on microwave plasma CVD grown diamond film indicates that the damage from electrical transient at interface between metal electrodes and diamond film can cause device dark current and noise increasing. The reliability of such UV detectors related to radiation effects is considered. The abnormal generation-recombination process of free carriers is presented. The main failure mechanisms, currents crowding effect and self-accelerating failure at the grain boundary are carried out to explain the irradiation-induced failure happened in the MSM diamond UV detectors.
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