Abstract
Radiation-induced diffusion in tracks of swift ions caused by excitation of electrons and resulting in the formation of dilatations has been considered. The expressions for the longitudinal and radial atomic displacements are derived as well as those for the diagonal components of the strain tensor. The atomic-density distribution in the vicinity of a track is obtained in terms of the parameters of the three-dimensional energy distribution in an excited electron gas. The results obtained theoretically are compared with the known experimental data. The suggested approach provides the evaluation of the time of formation of track dilatations, the mobility of the atoms in the target irradiated with swift ions, and the energy losses for formation of wirelike dilatations in the tracks. It is shown that the ion irradiation of semiconductor crystals can be used for obtaining one-dimensional quantum objects.
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