Abstract
This paper gives an overview of the physics and electrical characteristics of irradiation-induced defects in silicon created by electrons, protons, and helium ions. The parameters of the traps usable as recombination centers or causing doping and discharging effects are described quantitatively, including temperature dependence and injection level dependence. The influence of recombination centers on the electric characteristics of power devices is discussed, especially with respect to applications for medium-voltage and high-voltage power devices.
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