Abstract
Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1MeV 69Ga+ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.
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