Abstract
The effect of further irradiation on 1×10 15 or 6×10 15 Kr/cm 2 implanted aluminium has been investigated by a channeling method with a 1MeV He + beam at room temperature. The post-implantation irradiation by the analysis beam enhanced the formation of epitaxial solid krypton precipitates. This result indicates that interstitials introduced during implantation play an important role in the formation of solid krypton for Kr implantation with high doses
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
