Irradiation enhanced electric property of Palladium doped diamond like carbon thin films

Abstract

The effect of copper (Cu2+) ions (300 keV) irradiation on the morphological, structural and electrical properties of palladium (Pd) doped diamond like carbon (Pd-DLC) thin films have been studied. The DLC and 5% Pd-DLC thin films are prepared by using RF magnetron sputtering technique. 5% Pd-DLC films are irradiated with Cu2+ (300 keV) ions having 2 × 104 and 4 × 104 atoms/cm2/s fluence rate. SEM, Raman and four point probes are used to analyze morphological, structural and electrical properties of these thin films, respectively. Raman spectroscopy results confirmed about the reduction in internal stress and increase in graphitization nature of films due to Pd and Cu ions incorporation. The maximum graphitization character is obtained at 4 × 104 ions cm−2 s−1 fluence rate. SEM results showed that Pd-Cu metal’s cluster formation on the surface of doped and irradiated films. This conducting metal’s cluster formation is responsible for the enhancement in electrical properties of Pd-DLC thin films. Four point probes results showed the highly improved electrical properties at fluence rate of 4 × 104 atoms/cm2/s. These results can be applied in various electronics industries due to high conductivity.