Abstract
Two kinds of silicon samples have been used in this work: one containing a sequence of boron spikes and one with a sequence of alternating boron and antimony spikes, both grown by molecular beam epitaxy. These samples were irradiated with 2.5 MeV protons at an elevated temperature ranging from 500 to 830 °C and characterized by secondary-ion-mass spectrometry. The energy of the proton beam was chosen such that the generation rate of point defects can be considered as uniform throughout the delta-doped Si samples. The influence of the sample surface and of the boron concentration (ranging from 5×1015 to 3.2×1018 B/cm3 in the different samples) on the diffusion of boron have been studied in detail. The effect of antimony on boron diffusion has also been analyzed. For each sample, the B diffusion coefficient is increased under irradiation as compared to the B diffusion coefficient in unirradiated areas. This enhancement is dependent on the irradiation temperature, on the position of the boron spike and on the boron concentration. Further, the presence of antimony enhances the boron diffusion during low-temperature proton irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
