Abstract
The interaction between a water cluster ion beam and the surface of a silicon substrate was investigated. The sputtering yield of silicon by a water cluster ion beam was approximately ten times larger than that by an argon monomer ion beam. X-ray photoelectron spectroscopy was used to analyze the silicon surface irradiated with a water cluster ion beam. The analysis revealed that the surface was oxidized, and the oxidation was saturated approximately at the dose of 1 × 10 14 ions/cm 2. The number of disordered atoms measured by the Rutherford backscattering also supported the result.
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