Abstract
We report the irradiation effects on rf reactive magnetron sputter deposited TiO2/Al2O3 hetero-structured thin films. These films are irradiated with 6 MeV electron beams by maintaining the dose rate at ∼1 kGy/min at three different doses 10, 20, and 30 kGy. Optical properties of the irradiated films are studied by XRD, AFM, UV Visible spectroscopy and PL spectroscopy and electrical properties are measured by Keithley Source meter. Experimental results confirm that the optical and electrical properties of the TiO2/Al2O3 multilayer films are mostly influenced by the electron dose. Optical analysis showed that irradiation modifies the optical band gap. The film properties are mainly governed by the overall clusters’ formation in the oxide surface and defects due to electron irradiation. High electron doses cause the recombination of defects which reduces the film resistivity and increases the current. Optical and electrical measurement results show a reasonable qualitative agreement with each other.
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