Abstract
The electrical properties, defects and conductivity recombination mechanism of electron and ion irradiations were investigated in n-type 4H-SiC Schottky diodes. The incident particles were selected as 1 MeV electrons, 25 MeV C and 40 MeV Si ions, respectively. The defects in 4H-SiC Schottky diodes were characterized using deep level transient spectroscopy (DLTS). The primary knock-on atoms (PKAs) distribution in the irradiated 4H-SiC is calculated by SRIM code. According to the experimental results, there are significant differences between the defects produced by electrons and heavy ions. The complex peak combination can characterize the production rate of the cascades. The production rate of the cascades induced by heavy ions is much higher than that induced by electrons. Different conductivity compensation brought by different defects is the major reason for the significant difference in carrier removal rate.
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