Abstract
We revealed the existence of a very thin (∼50 Å thick) epitaxial iron-oxide interlayer in amorphous Ba-ferrite thin films on sapphire(001) using synchrotron x-ray scattering. Depending on the sputtering gases used in radio frequency sputtering deposition, two different iron-oxide interlayers were formed; non-magnetic α-Fe2O3 interlayer by pure Ar gas and ferromagnetic Fe3O4 interlayer by Ar-10% O2 gas mixture. The α-Fe2O3 interlayer much more promoted the crystallization of amorphous Ba-ferrite, compared to the Fe3O4 interlayer. We suggest that the interlayer existing between amorphous Ba-ferrite and sapphire substrate greatly contributes to the reduction of the activation energy for the crystallization of amorphous Baferrite film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
