Abstract
IrO2 nanodot (ND) growth by plasma enhanced atomic layer deposition as a charge storage layer has been investigated. As-deposited IrO2 NDs showed a high density of 2.38 x 10(12)/cm2 and a small mean diameter of 3.22 nm, and turned into a spherical shape with a large dot-to-dot separation after annealing. The metal-oxide-semiconductor capacitor with Al2O3 blocking and IrO2 ND charge storing layers showed a memory window of 7.2 V. Compared with the sample without Ir2O3 NDs, the sample with NDs showed superior memory characteristics.
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