Iridium silicides obtained by rapid thermal annealing

Abstract

Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for several temperatures in the range of 350–500°C. For the samples annealed in argon atmosphere, oxygen is incorporated during the RTA process, slowing down the reaction at the interface or even stopping it. In this case, no clear compound, Ir 1Si 1 or Ir 1Si 1.75, could be identified neither from the RBS spectra nor from the AES profiles. On the other hand, when the anneal is performed under vacuum, silicidation takes place. In samples processed at 400°C in these conditions and processing time shorter than 45 s only the Ir 1Si 1 compound was formed. For longer annealing time, Ir 1Si 1.75 appeared too. At higher temperatures, even for very short processing time, Ir 1Si 1.75 was formed.