Abstract

The Schottky barrier properties of Ir on In0.52Al0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call