Abstract
针对载流子在面式-三(2-苯基吡啶基-N,C2')铱(Ⅲ)(Ir (ppy)3)上的聚集会对器件性能产生不良影响,在发光层中分别掺入4％的双(2-(4,6-二氟苯基)吡啶基-N,C2')铱(Ⅲ)(吡啶-2-羧基)配合物(FIrpic)和4％的4,4',4-三(咔唑-9-基)三苯胺(TCTA),器件的性能有明显的提高,最高电流效率分别达到51 cd/A和43.1 cd/A,提高约79％和50％,我们将器件效率的提高归因于TCTA和FIrpic可以使聚集在Ir(ppy)3界面的空穴向主体材料4,4'-二(咔唑-9-基)联苯(CBP)转移,进而可减弱对激子的猝灭作用.
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