Abstract
Continuous-wave CO 2 laser irradiation into gaseous mixture of triethylborate and diethoxy(dimethyl)silane represents a very feasible way of direct heat-induced conversion of two precursors, the one with the Si OR and the other with the B OR bonds, to the nanostructured polyborocarbosiloxane phase. These materials contain Si O B, SiO 2X n ( n = 1 , 2; X = C, Si), SiO 3X (X = Si, C), SiO 4, B(OSi) 3, B(OB) 3− x (OSi) x and BO 3 configurations, possess Si C and B C bonds, have spongy morphology, high specific area and high thermal stability.
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