Abstract
TEA CO 2 laser irradiation of gaseous trisilane–thiirane mixtures results in the co-decomposition of both components and allows chemical vapor deposition of polycarbosilthiane films that undergo reaction with air moisture, evolve H 2S and develop to polycarbosiloxanes. Laser-induced fluorescence experiments allowed detection of transient SiS in the gas phase. The gas-phase formation of SiS and polycarbosilthiane, accounted for on the basis GC/MS analysis of final volatile products and in situ measured FTIR spectra of the deposited polymers, involves reactions between silylenes and S atoms that are respective intermediates of trisilane and thiirane decomposition.
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