Abstract
AbstractElectrical and photoelectrical properties of IR‐devices manufactured on (Hg, Cd)Te‐wafers cut from single crystals grown by modified Bridgman method are reported and compared to those of devices made on THM‐(Hg, Cd)Te.MIS‐structures and photodiodes were used in order to investigate the different materials.The influence of material parameters and device technology respectively is involved in our discussion of device properties. The quality of modified Bridgman‐(Hg, Cd)Te was found to be comparable to that of the THM‐(Hg, Cd)Te.At T = 80 K and FOV = 60° background limited detectivity of photodiodes with a cut‐off wavelength of λco = 10.7 μm was achieved.
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