Abstract
High sensitive IR detectors were developed by using noncompensated CdxHg1-xTe (x=0.25÷0.3) with the field-effect electrode from InxO3, which were received by magnetron spattering onto the anodized surface of the single crystal. Photoelectric properties (spectral distribution of the photoconductivity, time-response, the uniformity of the spatial distribution of sensitivity) were investigated under different potential applied to the field-effect electrode. For high sensitive material the detectivity D* = 8·1011 cm Hz1/2 W-1was obtained at the wavelength of 5 μm in the aperture angle of 30°. It was shown that the semitransparent field-effect electrode made from In2O3 allows to rule the output parameters of the detector in a wide range.
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