IR Detector Prepared by Y-Ba-Cu-O Thin Film

Abstract

An Infrared radiation detector (IR) has been investigated by using a superconducting YBa2Cu3Ox(YBC0) thin film. The YBCO thin films were prepared on both LaAlO3 and MgO substrates by an rf-sputtering equipment and were patterned to form a microbridge. The infrared light, which was generated by a semiconductor laser diode(λ =827nm), was incident upon the microbridge. The temperature dependence of the photoresponse was proportional to dR/dT, and showed the sharp maximum at superconducting transition edge under relatively low modulation frequency and low bias current. When the IR detector was prepared on LaAlO3 substrate, the noise equivalent power(NEP) and responsivity were 1 × 10-12 W/ \(\sqrt {Hz} \) and 3.7 × 105 V/W, respectively. As increasing the bias current, non-bolometric behavior was clearly observed in superconducting transition tail.