IR detection of NO2 using p+ porous silicon as a high sensitivity sensor.

Abstract

Mesoporous silicon doped with 3.0 x 10(19) B atoms cm-3 (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.