Abstract
The laser-induced decomposition of 2-chloroethenylsilane was studied in the IR with a TEA CO 2 laser and in the UV with a narrow-band, frequency-doubled dye laser at 212.5 nm. Silylene was observed in the IR multiphoton dissociation (MPD) via laser-induced fluorescence (LIF). The nascent silylene fragments are vibrationally excited in the bending mode. Multiphoton UV photolysis yields a fluorescence emission spectrum originating from the SiH (A 2 Δ → X 2 Π) Δν = 0 system, with several atomic Si transitions and molecular bands corresponding to C 2 (d 3 Π g → a 3 Π g) Δν = 2, 1, 0, −1 and −2 transitions. The simulation of the spectra originating from diatomic fragments indicates that these possess a high content of internal energy. A high population of Si triplet states is observed.
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