Abstract
The absorption of light by free charge carriers with the participation of surface and bulk optical phonons is considered in terms of the Boltzmann statistics and Pekar-Frohlich Hamiltonian for the electron-photon interaction in a polar semiconductor layer within the framework of the model of a rectangular quantum well. It is found that the contributions of the surface and bulk modes to the probability of light absorption depend on the quantum-well width. It is demonstrated that the line of the photon-phonon resonance has a complex structure due to the difference between the frequencies of the bulk and surface optical vibrations. The influence of the adjacent media on the coefficient of light absorption is investigated.
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