Abstract
The effect of ionizing radiations (Alpha, Beta, Gamma) in CdS/p-Si heterojunction solar cells are discussed in this paper. The short-circuit current density parameters before Gamma irradiation conditions have been improved up to 35 mA/cm2 and after Gamma irradiation was 30 mA/cm2. The open circuit voltage before Gamma irradiation was 0.59 and 0.565 V after Gamma irradiation. The limitations of these devices were discussed by investigating the dependence of electrical and efficiency parameters in function of radiation time. The efficiency of the cell before radiation was equal to (11.2%) whenever, after the impact of both Alpha, Beta, and Gamma was follows, 4.7, 4.9, and 5.1% respectively. The fill factor before and after Gamma irradiation was 54.5 and 53 %. Studying and analyzing the cells using the I-V, with the change of time rate of Gamma radiation played a critical role in reducing the efficiency of solar cells. The campaign was carried out with different doses of a series of solar cells by exposing them to different time. The deterioration parameters of CdS/p-Si solar cells by Gamma radiation led to strongly supports the results of minority carrier lifetime, which clearly showed diminishing minority carrier lifetime with increasing radiation dose.
Highlights
The electrical characteristics of silicon solar cells are affected by environmental condition
Output parameters of solar cell such as maximum output power, fill factor, efficiency, short circuit current, and open circuit voltage strongly depend on internal parameters of solar cells such as series resistance, RS, saturation current, I0 and ideal factor, n. it has been proved that increasing each of above internal parameters of solar cell causes that the output characteristics of solar cells decreased (Alurralde et al, 2004; Madatov, 2014; VASTC, Vujisic, Loncar, & Osmokrovic, 2007)
The relative importance and efficiency of each process is strongly dependent upon the energy of the photons and upon the density and atomic number of the absorbing medium. Both Voc and Isc are dependent on the time of radiation for all solar cell used. figure 2 shows, as the time of radiation (5, 10, 20, 30 min) decrease, the short circuit current Isc and open-circuit voltage Voc over a wide range of illuminated light time intensity is observed to be decrease, which is due to the low bulk diffusion length, electrons generated near the rear side of the solar cell have a low probability for collection
Summary
The electrical characteristics of silicon solar cells are affected by environmental condition. The eject electrons from the atoms of the crystal results a track of ionized atoms in the solar cells crystal These defects mostly act as recombination points that decreased the diffusion length and life time of minority carrier as well as increased internal parameters of cells. Several routes have been proposed to overcome these fundamental spectral losses that can account from as much as 50% All these methods or concepts, which are referred to as Third Generation(3G) photovoltaic (A El-Amin & Ibrahim, 2012), concentrate on a better exploitation of the solar spectrum, e.g., intermediate band gaps (El-Mongy, Belal, El Shaikh, & El Amin, 1997), quantum dot concentrators (Madatov, 2014) and down- and up-converters (Trupke, Green, & Würfel, 2002)
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