Abstract
Ionizing radiation experiments on gated controlled lateral p-n-p (GLPNP) bipolar transistor show that the base current obtained by gate sweeping (GS) exhibits two “unusual” phenomena, including decreasing in amplitude and narrowing in peak profile after radiation. Both interface traps and border taps are called switching states due to their similar recombination effects on substrate carriers. The two traps can attribute to the base current. The separation of interface traps and border taps is achieved by a frequency-dependent charge pumping technique. Based on Technology Computer-Aided Design (TCAD) simulation in conjunction with device theory, this work suggests that the two “unusual” phenomena can be explained by the combined effects of border traps and interface traps.
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