Abstract
The temperature dependence of the electron concentration n(T) for a Te-doped AlxGa1−xSb epilayer with x=0.2 or x=0.6 is obtained from Hall-effect measurements. The density ND and energy level ΔED of Te donors are determined by the graphical peak analysis method (i.e., free-carrier concentration spectroscopy) from the n(T). Since the donor level of Te is shallow in Al0.2Ga0.8Sb, the Fermi–Dirac distribution function, which does not include the influence of the excited states of the Te donors, can be applied to determining ND and ΔED. In Al0.6Ga0.4Sb, on the other hand, a proposed distribution function including this influence is elucidated to be necessary to the determination of ND and ΔED, because Te acts as a deep donor. Moreover, the excited states of the Te donors in Al0.6Ga0.4Sb are found to enhance the ionization efficiency of the Te donors at elevated temperatures.
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