Ionization in symmetric and nearly symmetric low energy ion–surface collisions

Abstract

Multiply charged ions are emitted following bombardment of Al(100) and Si(111) by low energy Si+ and P+ ions. The ion formation is attributed to inner-shell electron promotion during a hard collision between symmetric or nearly symmetric atomic species, followed by Auger decay outside the surface. The relative yield of triply charged Si ions for Si+→Si(111) is much smaller than that of triply charged Al ions in direct recoil Si+→Al(100) experiments. This difference can be explained by assuming that only one 2p hole is produced in a Si atom during the symmetric collision, whereas a double 2p hole is also produced in the Al atom following the nearly symmetric Si–Al collision. Further evidence is provided by the complimentary experiment P+→Si(111), where Si3+ regains its intensity and Si4+ emerges as a result of a double 2p hole decay with shake-off.