Abstract
Ionization coefficients of holes and electrons (kp and kn) in Ga0.96Al0.04Sb have been derived from the variations of the photocurrent multiplication as a function of the reverse bias in Be-implanted p+Ga0.96Al0.04Sb/n Ga0.96Al0.04Sb/n+ GaSb mesa diodes. Three wavelength values have been used for the illumination in order to obtain pure hole injection, nearly pure electron injection, and mixed injection. The kp and kn values thus determined for electric fields varying from 18 to 32 V/μm exhibit a high ratio value showing the interest of this material for avalanche photodiodes devices.
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