Abstract
AbstractIon‐implanted planar‐gate power GaAs MESFETs have been optimized for single‐voltage‐supply operation. Recessed gate MESFETs suffer from variations in pinch‐off voltage. The optimized ion‐implanted planar‐gate power GaAs MESFET has an 80 keV 4.2×1012/cm2 Si channel with a 120 keV 1.7×1012/cm2 Be p‐buffer. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 44–46, 2001.
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