Ion-implanted GaAs JFETs with f/sub t/&amp;lt;45 GHz for low-power electronics

J.C Zolper,A.G Baca,J Shul,M.E Sherwin,V.M Hietala

doi:10.1109/gaas.1996.567836

Ion-implanted GaAs JFETs with f/sub t/&lt;45 GHz for low-power electronics

J.C Zolper, A.G Baca + Show 3 more

https://doi.org/10.1109/gaas.1996.567836

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Publication Date: Dec 31, 1996

Affiliation: Sandia National Laboratories

#Junction Field Effect Transistors #GaAs Junction Field Effect Transistors + Show 8 more

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Abstract

GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 /spl mu/m. The structure is fully self-aligned and employs all ion implantation doping. p/sup +/-gate regions are formed with either Zn or Cd implants along with a P co-implantation to reduce diffusion. The source and drain implants are engineered with Si or SiF implants to minimize short channel effects. 0.3 /spl mu/m gate length JFETs are demonstrated with a subthreshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.

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