Abstract
The dispersion of photoelastic and elasto-optical coefficients of GaAs in the infrared region of the spectrum is calculated. The basic physical parameters entering the calculation correspond to the strain derivatives of the transverse phonon effective charge and of the transverse and longitudinal optical phonon frequencies. They are all deduced from existing piezospectroscopic data. The calculation extends to other physical parameters such as the pressure derivatives of the effective charge and index of refraction. The dispersion of the integrated intensity for ionic Brillouin scattering is also computed. Both the linewidth of the transverse optical phonon and its strain dependence are taken into account explicitly. They are shown to have a substantial effect on the profile of the dispersions.
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