Abstract
An ionic nucleation was proposed to deposit crystallized silicon film fast at 130°C. Initially, ionic argon was introduced into the deposition of amorphous silicon film for a short time. The energetic argon particles bombarded the grown surface slightly and reduced the nucleation. Then the argon flow was turned off and the film deposition remained proceeding. The low temperature deposited film was crystallized well. When this processed silicon film acted as a channel of bottom-gate thin-film transistor, it possessed current drivability superior to that of thin-film transistor using hydrogen diluted crystallized silicon channel.
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