Abstract
We present the modulation of anisotropy field, coercivity, and domain wall (DW) velocity in CoFeB/MgO thin films with perpendicular anisotropy by applying voltages across an ionic liquid gate. Domain wall velocities in the creep regime can be modulated by a factor of 4.2, and the anisotropy field of the device can be modulated by 40 mT when going from +0.8 V to −0.8 V. The applied E-fields are seen to significantly influence DWs' pinning, depinning, and nucleation processes. In addition, we report on the evolution of the magnetic properties of the liquid/solid device as a function of time going from the pristine CoFeB/MgO film through device fabrication and operation up to one month. These results show that the solid/liquid device structure based on CoFeB/MgO thin films can be an efficient way to control magnetic properties with voltages below 1 V.
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