Abstract
Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. Due to their chemical stability, transition metal dichalcogenides (TMDs) are ideal candidates to produce ionic-liquid-gated FETs. Furthermore, as recently discovered, ILG can be used to obtain the band gap of two-dimensional semiconductors directly from the simple transfer characteristics. In this work, we present an overview of the operation principles of ionic liquid gating in TMD-based transistors, establishing the importance of the reference voltage to obtain hysteresis-free transfer characteristics, and hence, precisely determine the band gap. We produced ILG-based bilayer WSe2 FETs and demonstrated their ambipolar behavior. We estimated the band gap directly from the transfer characteristics, demonstrating the potential of ILG as a spectroscopy technique.
Highlights
The discovery of two-dimensional materials unleashed a revolution in nanoelectronics during the last decade [1]
In 2011, Kis et al demonstrated for the first time a field-effect transistor (FET) in which a bilayer MoS2 crystal was used as the semiconductor channel [2]
As we transition metal dichalcogenides (TMDs)-FETs operating in the ambipolar injection regime [38,39] and the enhancement of the present in this work, ionic-liquid gating (ILG)-based TMD transistors grant the possibility of determining the electron−phonon interaction in multivalley TMDs [24,29,40]
Summary
The discovery of two-dimensional materials unleashed a revolution in nanoelectronics during the last decade [1]. The extreme tunability of charge carrier concentrations that can be obtained by this technique has Micromachines 2021, 12, 1576 allowed the attainment of new physical regimes, achieving, for example, superconductivity in band-insulating materials such as SrTiO3 (STO) [20], ZrNCl [11], or KTaO3 [21]. Ionic-gating experiments have moved has been established as a promising technique from an applied point forward through other inorganic systems, such as two-dimensional transition metal of view, and to obtain fundamental knowledge about the phase diagrams of novel materials [9,22]. As we TMD-FETs operating in the ambipolar injection regime [38,39] and the enhancement of the present in this work, ILG-based TMD transistors grant the possibility of determining the electron−phonon interaction in multivalley TMDs [24,29,40]. Of semiconducting TMDs quantitatively from simple transport measurements [39,41,42,43,44]
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