Ionic floating-gate memories

Abstract

Device Technology Digital implementations of artificial neural networks perform many tasks, such as image recognition and language processing, but are too energy intensive for many applications. Analog circuits that use large crossbar arrays of synaptic memory elements represent a low-power alternative, but most devices cannot update the synaptic weights uniformly or scale to large array sizes. Fuller et al. developed an integrated device, ionic floating-gate memory, that has the gate terminal of a redox transistor electrically connected to a diffusive memristor. This low-power device enabled linear and symmetric weight updates in parallel over an entire crossbar array at megahertz rates over 109 write-read cycles. Science , this issue p. [570][1] [1]: /lookup/doi/10.1126/science.aaw5581