Abstract
Oxygen vacancy (VO) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of VO, including defect energy level and formation energy (Evf). Trivalent dopant (Al or La) significantly reduces Evf. Based on the calculated results, ZrO2-based RRAM devices are designed to control the formation of VO, and improved resistive switching uniformity is demonstrated in experiments.
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