Abstract
The temperature dependences of the conductivity and permittivity of the Ag8GeSe6 compound have been studied in direct and alternating electric fields. This phenomenon is associated with the process of charge accumulation at the boundary of the sample with ionic conductivity and the blocking electrode, and the formation of a double electric layer. The observed dielectric relaxation is associated with the transition of the crystal to the superionic state. It has been established that hopping conduction with a variable hopping length over localized states near the Fermi level takes place in an Ag8GeSe6 crystal.
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