Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface

Abstract

The actual requirements for circuit miniaturization and production economy require obtaining smooth silicon surfaces using diluted chemicals, especially HF treatment. This fundamental research deals with the electrochemical corrosion of n- and p-type silicon substrates in 0.25 M dilute HF solutions, and examines the influence of fluoride ions or protons additives. All experiments were conducted both in the dark and under constant light flux, with solutions thoroughly degassed by high purity argon bubbling. Polarization resistance measurements near the open circuit potential lead to the value of the corrosion current. The kinetics of charge transfer reactions, studied by linear voltammetry, were interpreted as a function of the carrier density in the energy levels of the semiconductor and the concentration of acceptor species in the solution. The influence of these parameters on the surface roughening of the silicon samples was also studied by ex situ atomic force microscopy profile measurements.