Abstract
The adhesion of 30 nm thick Ni films on glassy carbon (GC) was examined as a function of the interface modification produced by 84Kr + implantation through the interface. The Ni/GC specimens were held at 100°C and implanted with 170 keV 84Kr + at doses of 5 × 10 15, 1 × 10 16 and 5 × 10 16 Kr/cm 2. No topographical damage was introduced to the specimens at doses less than or equal to 1 × 10 16 Kr/cm 2. Substantial void formation was observed after doses of 5 x 10 16 Kr/cm 2. Auger electron spectroscopy (AES) depth profiling showed that the as-deposited films formed sharp interfaces with the GC substrates. Substantial quantities of C were mixed into the Ni layers during 84Kr + implantation. The average Ni/C ratio in the films following both 5 × 10 15 and 1 × 10 16 Kr/cm 2 implantation was approximately the same as nickel carbide (Ni 3C). Despite the extensive interfacial mixing, the interfaces between the Ni (Ni-C) films and the glassy carbon substrates remained very abrupt. X-ray photoelectron spectroscopy (XPS) and AES showed no indication of any Ni-C chemical bonding across the Ni/GC interfaces before or after the ion mixing. XPS and AES analyses obtained from the middle of the ion mixed Ni films showed the presence of Ni 3C, but this bonding had no significant effect on the interfacial adhesion. Adhesion testing, using a scratch tester in conjunction with SEM/AES analysis, showed a significant increase in the adhesion for the 84Kr + implanted specimens. The as-deposited films were removed at forces much less than 1 N. In contrast, forces of approximately 14 N were required to remove the films implanted with 5 × 10 15 and 1× 10 16 Kr/cm 2. This adhesion increase was attributed to the mechanical interlocking induced by the ion mixing.
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