Abstract
Ion beams are extensively used for the modification and analysis of a wide range of materials. However, basic mechanisms of defect propagation with the effect of different electronic energy losses are not understood yet and are essential to improve device performance. In the present study, AlGaN/GaN multi-quantum wells (MQWs), which were grown on sapphire by metal organic chemical vapor deposition, have been subjected to swift heavy ion irradiation at a fixed fluence as a function of type of projectile and its energy to understand the defect formation. Irradiated materials have been compared with the as-deposited ones to see the effects on composition, periodicity and strain. The composition gradient as a function of S e has been investigated with analytical and high-angle annular dark field scanning transmission electron microscopy (TEM) and the results have been further confirmed by high-resolution X-ray diffraction. The interface quality has been analyzed with aberration-corrected high-resolution TEM images. Effects of electronic energy loss on Raman modes have been investigated. Finally, the effects of ion beams on MQWs interfaces are discussed.
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