Abstract
The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300°C in Si(100) was studied by Rutherford backscattering and channeling technique. Solid phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline (a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam. Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.
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