Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi 2 in Si (100) at 320°C

Abstract

By combining room temperature Fe ion implantation in Si (100) at concentrations of 2–18 at.% with 500 keV Si ion beam-induced epitaxial crystallization at 330°C, we have simultaneously synthesized the cubic and the tetragonal FeSi 2 phases. Structural characterization was performed by cross-sectional transmission electron microscopy, Rutherford backscattering spectroscopy and ion channeling. The epitaxial relations to the Si matrix were determined. The results indicate the importance of the interfacial energy for the formation of the α-phase whose equilibrium formation temperature is above 950°C.