Abstract
We investigated the influence of ion-beam irradiation of the SiC(0001̄) surface on the growth of carbon nanotubes (CNTs) by the SiC surface decomposition method. After an SiC(0001̄) surface was irradiated by Ar+ ions at 1 keV with a dose of 4.5×1015 cm-2 in an ultrahigh vacuum chamber, and then annealed at 1700 °C for 2 h at a pressure of 2×10-2 Pa, CNTs formed on the surface that were longer than CNTs grown without ion-beam irradiation. When 5 keV Ar+ ions were used, no CNTs formed, but instead an amorphous carbon layer formed on the surface.
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