Abstract
A metastable silicide phase with a composition of Pt2Si3 has been obtained by using ion-beam mixing techniques. To form the phase, a thin PtSi film on a Si substrate was first converted into a Si-rich amorphous Pt-Si alloy by implantation with energetic ions through the PtSi-Si interface. The amorphous alloy then transformed into the metastable crystalline phase upon post annealing at 350–500 °C. X-ray diffraction analysis showed that the Pt2Si3 phase has a hexagonal crystal structure with lattice parameters a=3.841 Å and c=11.924 Å and there are ten atoms per unit cell. The phase was unstable at temperatures above 550 °C and transformed back to PtSi and Si. The metastable Pt2Si3 phase was found to exhibit a superconducting transition onset at about 4.2 °K and becomes completely superconductive below 3.6 °K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
